SEMICONDUCTOR PROPERTIES OF IRON-OXIDE ELECTRODES

被引：165

作者：

WILHELM, SM

YUN, KS

BALLENGER, LW

HACKERMAN, N

机构：

[1] Department of Chemistry, Rice University, Houston

来源：

JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1979年 / 126卷 / 03期

关键词：

electrolysis; ion oxides; passivity; photocurrent;

D O I：

10.1149/1.2129055

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

The semiconductor electrode properties of thermally grown iron oxide and anodic oxide films on iron are compared. The bandgaps are 2.1 and 1.9 eV respectively. Donor densities and flatband potentials are reported. Measurement of the currents produced by chopped illumination (f 100 Hz) has allowed evaluation of electrode parameters and determination of reaction pathways. © 1979, The Electrochemical Society, Inc. All rights reserved.

引用

页码：419 / 424

页数：6

共 26 条

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