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EFFECTS OF ULTRATHIN OXIDES IN CONDUCTING MIS STRUCTURES ON GAAS
被引:20
作者
:
CHILDS, RB
论文数:
0
引用数:
0
h-index:
0
CHILDS, RB
RUTHS, JM
论文数:
0
引用数:
0
h-index:
0
RUTHS, JM
SULLIVAN, TE
论文数:
0
引用数:
0
h-index:
0
SULLIVAN, TE
FONASH, SJ
论文数:
0
引用数:
0
h-index:
0
FONASH, SJ
机构
:
来源
:
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY
|
1978年
/ 15卷
/ 04期
关键词
:
D O I
:
10.1116/1.569795
中图分类号
:
O59 [应用物理学];
学科分类号
:
摘要
:
引用
收藏
页码:1397 / 1401
页数:5
相关论文
共 5 条
[1]
THEORY OF CAPACITANCE AND CONDUCTANCE BEHAVIOR OF SCHOTTKY-BARRIER AND CONDUCTING M-I-S DIODES WITH INTERFACE TRAPS
[J].
FONASH, SJ
论文数:
0
引用数:
0
h-index:
0
机构:
PENN STATE UNIV,DEPT ENGN SCI & MECH,UNIVERSITY PK,PA 16802
PENN STATE UNIV,DEPT ENGN SCI & MECH,UNIVERSITY PK,PA 16802
FONASH, SJ
.
JOURNAL OF APPLIED PHYSICS,
1977,
48
(09)
:3953
-3958
[2]
ROLE OF INTERFACIAL LAYER IN METAL-SEMICONDUCTOR SOLAR CELLS
[J].
FONASH, SJ
论文数:
0
引用数:
0
h-index:
0
机构:
PENN STATE UNIV,DEPT ENGN SCI & MECH,UNIVERSITY PK,PA 16802
PENN STATE UNIV,DEPT ENGN SCI & MECH,UNIVERSITY PK,PA 16802
FONASH, SJ
.
JOURNAL OF APPLIED PHYSICS,
1975,
46
(03)
:1286
-1289
[3]
OUTLINE AND COMPARISON OF POSSIBLE EFFECTS PRESENT IN A METAL-THIN-FILM-INSULATOR-SEMICONDUCTOR SOLAR-CELL
[J].
FONASH, SJ
论文数:
0
引用数:
0
h-index:
0
机构:
PENN STATE UNIV,DEPT ENGN SCI & MECH,UNIVERSITY PK,PA 16802
PENN STATE UNIV,DEPT ENGN SCI & MECH,UNIVERSITY PK,PA 16802
FONASH, SJ
.
JOURNAL OF APPLIED PHYSICS,
1976,
47
(08)
:3597
-3602
[4]
Stirn R. J., 1977, 1977 International Electron Devices Meeting, P48, DOI 10.1109/IEDM.1977.189157
[5]
TECHNOLOGY OF GAAS METAL-OXIDE-SEMICONDUCTOR SOLAR-CELLS
[J].
STIRN, RJ
论文数:
0
引用数:
0
h-index:
0
机构:
CALTECH,JET PROP LAB,PASADENA,CA 91103
CALTECH,JET PROP LAB,PASADENA,CA 91103
STIRN, RJ
;
YEH, YCM
论文数:
0
引用数:
0
h-index:
0
机构:
CALTECH,JET PROP LAB,PASADENA,CA 91103
CALTECH,JET PROP LAB,PASADENA,CA 91103
YEH, YCM
.
IEEE TRANSACTIONS ON ELECTRON DEVICES,
1977,
24
(04)
:476
-483
←
1
→
共 5 条
[1]
THEORY OF CAPACITANCE AND CONDUCTANCE BEHAVIOR OF SCHOTTKY-BARRIER AND CONDUCTING M-I-S DIODES WITH INTERFACE TRAPS
[J].
FONASH, SJ
论文数:
0
引用数:
0
h-index:
0
机构:
PENN STATE UNIV,DEPT ENGN SCI & MECH,UNIVERSITY PK,PA 16802
PENN STATE UNIV,DEPT ENGN SCI & MECH,UNIVERSITY PK,PA 16802
FONASH, SJ
.
JOURNAL OF APPLIED PHYSICS,
1977,
48
(09)
:3953
-3958
[2]
ROLE OF INTERFACIAL LAYER IN METAL-SEMICONDUCTOR SOLAR CELLS
[J].
FONASH, SJ
论文数:
0
引用数:
0
h-index:
0
机构:
PENN STATE UNIV,DEPT ENGN SCI & MECH,UNIVERSITY PK,PA 16802
PENN STATE UNIV,DEPT ENGN SCI & MECH,UNIVERSITY PK,PA 16802
FONASH, SJ
.
JOURNAL OF APPLIED PHYSICS,
1975,
46
(03)
:1286
-1289
[3]
OUTLINE AND COMPARISON OF POSSIBLE EFFECTS PRESENT IN A METAL-THIN-FILM-INSULATOR-SEMICONDUCTOR SOLAR-CELL
[J].
FONASH, SJ
论文数:
0
引用数:
0
h-index:
0
机构:
PENN STATE UNIV,DEPT ENGN SCI & MECH,UNIVERSITY PK,PA 16802
PENN STATE UNIV,DEPT ENGN SCI & MECH,UNIVERSITY PK,PA 16802
FONASH, SJ
.
JOURNAL OF APPLIED PHYSICS,
1976,
47
(08)
:3597
-3602
[4]
Stirn R. J., 1977, 1977 International Electron Devices Meeting, P48, DOI 10.1109/IEDM.1977.189157
[5]
TECHNOLOGY OF GAAS METAL-OXIDE-SEMICONDUCTOR SOLAR-CELLS
[J].
STIRN, RJ
论文数:
0
引用数:
0
h-index:
0
机构:
CALTECH,JET PROP LAB,PASADENA,CA 91103
CALTECH,JET PROP LAB,PASADENA,CA 91103
STIRN, RJ
;
YEH, YCM
论文数:
0
引用数:
0
h-index:
0
机构:
CALTECH,JET PROP LAB,PASADENA,CA 91103
CALTECH,JET PROP LAB,PASADENA,CA 91103
YEH, YCM
.
IEEE TRANSACTIONS ON ELECTRON DEVICES,
1977,
24
(04)
:476
-483
←
1
→