EVIDENCE OF PSEUDOGAP FORMATION IN A NEW VALENCE-FLUCTUATING COMPOUND - CERHSB

被引：199

作者：

MALIK, SK ^{[1
]}

ADROJA, DT ^{[1
]}

机构：

[1] INDIAN INST TECHNOL,BOMBAY 400076,INDIA

来源：

PHYSICAL REVIEW B | 1991年 / 43卷 / 07期

关键词：

D O I：

10.1103/PhysRevB.43.6277

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The compound CeRhSb, crystallizing in the orthorhombic CeCu2-type structure, has been synthesized. Its unit-cell volume is anomalous in relation to that of isostructural RRhSb (R = rare earth) compounds. Its magnetic susceptibility is weakly temperature dependent and exhibits a broad maximum at about 113 K, characteristic of valence-fluctuating Ce compounds. The resistivity also shows a broad maximum at 113 K followed by a rapid rise below 21 K. The latter indicates a gap formation in the electronic density of states. The gap energy is estimated to be about 4 K. Thus CeRhSb appears to represent a valence-fluctuating cerium compound in which a pseudogap develops in the electronic density of states at low temperatures.

引用

页码：6277 / 6279

页数：3

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