INTERFACIAL PROPERTIES OF PRECIPITATE-BASED ION-SELECTIVE ELECTRODES - ROTATING-DISK IMPEDANCE MEASUREMENTS OF THE AG2S-AG+ (AQUEOUS) INTERFACE

被引:21
作者
RHODES, RK
BUCK, RP
机构
[1] William Rand Kenan, Jr. Laboratories of Chemistry, University of North Carolina, Chapel Hill
基金
美国国家科学基金会;
关键词
D O I
10.1016/S0003-2670(01)93108-3
中图分类号
O65 [分析化学];
学科分类号
070302 ; 081704 ;
摘要
Three-electrode rotating disk impedance measurements were made from 31.6 kHz to 0.0178 Hz on Ag2S/Ag+ (aqueous) and Ag2S/Ag systems. Membranes were prepared from materials precipitated in excess of silver or sulfide ions, and stoichiometric mixtures. Impedances were analyzed, as a function of rotation rate and bathing activities, to isolate bulk conductivities, internal diffusion, surface kinetic and dissolution/crystallization impedances. High-frequency bulk resistivities, R∞, varied by four with precipitation and pressing conditions. Resistivities were the same for solution and ohmic configurations for each preparation. For ohmic contacts, R∞ and R(DC) were identical. Solution contact cells in 10-1 M and 10-2 M bathing silver ion solution gave identical frequency-dependent impedances which were independent of rotation rate. Thus, solution diffusional impedances and solution dependent surface kinetics were eliminated, and a finite Warburg, interior-Ag+-defect, diffusion impedance was indicated. Summation of bulk membrane and contact resistances, and this Warburg impedance served as a 'background' correction in analyzing dilute bathing solution interfacial impedances for surface effects. Corrected impedances in 10-3 -10-5 M AgNO3 showed solution diffusional behaviour combined with surface kinetic and dissolution impedances. An iterative linear least-squares method resolved these quantities. The surface resistance suggests a potential-dependent rate constant; dissolution time constants were solution-independent and smaller than those for solution diffusion. Thus, dissolution can be a rate-limiting step in establishment of steady-state potentials. © 1979.
引用
收藏
页码:185 / 196
页数:12
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