REVERSIBLE SWITCHING UNDER FORWARD BIAS IN CDS/CDTE HETEROJUNCTIONS

An interesting switching phenomenon in an n-CdS/p-CdTe heterojunction fabricated by a close-spaced sublimation technique is observed under forward bias conditions. The dark I-U characteristics at different temperatures in the range of 77 to 473 K and C-U characteristics at room temperature are investigated. An attempt is made to explain these observations in terms of a phenomenological model which assumes an interfacial insulating layer with trap defects responsible for the switching characteristics. The trap depth of the insulating layer is computed. These heterojunctions, if properly developed, appear to have potential applications in optical memory devices.