MAGNETIC-FIELD INDUCED QUENCHING OF EXCITONS IN MODULATION DOPED INGAAS QUANTUM-WELLS

被引：1

作者：

CHEN, W

FRITZE, M

FU, Q

NURMIKKO, AV

COLVARD, C

ACKLEY, D

LEE, H

机构：

[1] BROWN UNIV,DEPT PHYS,PROVIDENCE,RI 02912

[2] SIEMENS AG,CORP RES,PRINCETON,NJ 08540

来源：

SURFACE SCIENCE | 1990年 / 228卷 / 1-3期

基金：

美国国家科学基金会;

关键词：

D O I：

10.1016/0039-6028(90)90318-3

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

Magneto-optical studies of modulation-doped n-type InGaAs single quantum wells have been performed in a density regime where interaction between Landau levels from n=1 conduction subband and exciton states from n=2 subband is important. This allows the exciton to be used as probe of the localized-delocalized state aspect of the Landau levels, with a direct connection to the quantum Hall effect. © 1990.

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页码：318 / 321

页数：4

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