HIGH-TEMPERATURE JOSEPHSON DEVICES

被引：8

作者：

BRAGINSKI, AI

机构：

[1] Institut für Schicht und Ionentechnik (ISI), Forschungszentrum Jülich (KFA), Postfach 1913

来源：

PHYSICA C | 1991年 / 185卷

关键词：

D O I：

10.1016/0921-4534(91)92005-V

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Several types of controllable and potentially useful high-temperature Josephson devices with SNS-type characteristics have recently emerged. The main alternatives are various types of artificially nucleated grain-boundary junctions and junctions with various artificial barriers: noble-metal, heteroepitaxial semiconducting perovskite or altered native oxide. Planar SNS or SS'S weak links may also be viable. Operation at 77K is feasible.

引用

页码：391 / 400

页数：10

共 52 条

[1] ANISOTROPIC JOSEPHSON-JUNCTIONS OF Y-BA-CU-O/AU/NB FILM SANDWICHES
AKOH, H
CAMERLINGO, C
TAKADA, S
[J]. APPLIED PHYSICS LETTERS, 1990, 56 (15) : 1487 - 1489
[2] TUNNELING BETWEEN SUPERCONDUCTORS
AMBEGAOKAR, V
BARATOFF, A
[J]. PHYSICAL REVIEW LETTERS, 1963, 10 (11) : 486 - &
[3] AMINOV BA, 1991, IN PRESS
[4] BARNER JB, 1991, IN PRESS APPL PHYS L, V59
[5] CHARACTERISTICS OF IN-LINE JOSEPHSON TUNNELING GATES
BASAVAIAH, S
BROOM, RF
[J]. IEEE TRANSACTIONS ON MAGNETICS, 1975, MA11 (02) : 759 - 762
[6] BEASLEY MR, 1991, PHYSICA C, V185
[7] CHAR K, 1991, PHYSICA C, V185
[8] CHAR K, 1991, IN PRESS PHYS REV LE, V59
[9] CHAUDHARI P, 1991, PHYSICA C, V185
[10] NOVEL ALL-HIGH TC EPITAXIAL JOSEPHSON JUNCTION
CHIN, DK
VANDUZER, T
[J]. APPLIED PHYSICS LETTERS, 1991, 58 (07) : 753 - 755

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