DEEP TRAPPING CENTERS IN N-GAAS SURFACE-BARRIER DIODES FOR NUCLEAR RADIATION DETECTION

被引：8

作者：

PEARTON, SJ

TAVENDALE, AJ

WILLIAMS, AA

机构：

来源：

ELECTRONICS LETTERS | 1980年 / 16卷 / 12期

关键词：

D O I：

10.1049/el:19800339

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：483 / 484

页数：2

共 10 条

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[6] STUDY OF DEEP LEVELS IN GAAS BY CAPACITANCE SPECTROSCOPY [J].

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LOGAN, RA .

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[7] DEEP-LEVEL TRANSIENT SPECTROSCOPY - NEW METHOD TO CHARACTERIZE TRAPS IN SEMICONDUCTORS [J].

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[8] ELECTRON TRAPS IN BULK AND EPITAXIAL GAAS CRYSTALS [J].

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[9]

MILLER GL, 1977, ANNU REV MATER SCI, P377

[10] HOLE TRAPS IN BULK AND EPITAXIAL GAAS CRYSTALS [J].

MITONNEAU, A ;

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ELECTRONICS LETTERS, 1977, 13 (22) :666-668

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