FORMATION OF N-ALGAAS/GAAS EDGE QUANTUM-WIRE ON (111)B MICRO FACET BY MBE AND MAGNETIC DEPOPULATION OF QUASI-ONE-DIMENSIONAL ELECTRON-GAS

被引：10

作者：

NAKAMURA, Y ^{[1
]}

TSUCHIYA, M ^{[1
]}

MOTOHISA, J ^{[1
]}

NOGE, H ^{[1
]}

KOSHIBA, S ^{[1
]}

SAKAKI, H ^{[1
]}

机构：

[1] UNIV TOKYO,ADV SCI & TECHNOL,MEGURO KU,TOKYO 153,JAPAN

来源：

SOLID-STATE ELECTRONICS | 1994年 / 37卷 / 4-6期

关键词：

D O I：

10.1016/0038-1101(94)90249-6

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

An edge quantum wire (EQWI) structure with a feature width of 120 nm was successfully prepared on (111)B micro facets; the structure was fabricated by an ensembles of several growth modes in molecular beam epitaxy (MBE) on a patterned (001) substrate without resorting to any advanced lithographic technique. A clear deviation from the linear relationship is observed in a Landau plot of magnetoresistance at low magnetic fields, providing the first evidence of magnetic depopulation of one-dimensional subbands in a facets EQWI. The sheet electron concentration measured is 5.4 x 10(11) cm-2, which corresponds to the linear concentration of 4.8 x 10(6) cm-1, and the mobility is 3 x 10(4) cm2 V-1 s-1 or higher. These values indicate a high crystal quality of the facet EQWI thus prepared.

引用

收藏

页码：571 / 573

页数：3

相关论文

共 10 条

[1] CHARACTERIZATION OF VERY NARROW QUASI-ONE-DIMENSIONAL QUANTUM CHANNELS [J].

BERGGREN, KF ;

ROOS, G ;

VANHOUTEN, H .

PHYSICAL REVIEW B, 1988, 37 (17) :10118-10124

[2] NEW GAAS QUANTUM WIRES ON (111)B FACETS BY SELECTIVE MOCVD [J].

FUKUI, T ;

ANDO, S .

ELECTRONICS LETTERS, 1989, 25 (06) :410-412

[3] QUASI-ONE-DIMENSIONAL ELECTRON-GAS AND ITS MAGNETIC DEPOPULATION IN A QUANTUM-WIRE PREPARED BY OVERGROWTH ON A CLEAVED EDGE OF ALGAAS/GAAS MULTIPLE-QUANTUM WELLS [J].

MOTOHISA, J ;

SAKAKI, H .

APPLIED PHYSICS LETTERS, 1993, 63 (13) :1786-1788

[4] ENHANCED CRYSTALLOGRAPHIC SELECTIVITY IN MOLECULAR-BEAM EPITAXIAL-GROWTH OF GAAS ON MESAS AND FORMATION OF (001)-(111)B FACET STRUCTURES FOR EDGE QUANTUM WIRES [J].

NAKAMURA, Y ;

KOSHIBA, S ;

TSUCHIYA, M ;

KANO, H ;

SAKAKI, H .

APPLIED PHYSICS LETTERS, 1991, 59 (06) :700-702

[5] FORMATION OF 2-DIMENSIONAL ELECTRON-GAS IN N-ALGAAS/GAAS HETEROJUNCTIONS ON (111)B MICROFACETS GROWN BY MOLECULAR-BEAM EPITAXY ON A PATTERNED (001) SUBSTRATE [J].

NAKAMURA, Y ;

TSUCHIYA, M ;

KOSHIBA, S ;

NOGE, H ;

KANO, H ;

SAKAKI, H .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1993, 32 (3B) :L383-L385

[6] FORMATION OF A HIGH-QUALITY 2-DIMENSIONAL ELECTRON-GAS ON CLEAVED GAAS [J].

PFEIFFER, L ;

WEST, KW ;

STORMER, HL ;

EISENSTEIN, JP ;

BALDWIN, KW ;

GERSHONI, D ;

SPECTOR, J .

APPLIED PHYSICS LETTERS, 1990, 56 (17) :1697-1699

[7] SCATTERING SUPPRESSION AND HIGH-MOBILITY EFFECT OF SIZE-QUANTIZED ELECTRONS IN ULTRAFINE SEMICONDUCTOR WIRE STRUCTURES [J].

SAKAKI, H .

JAPANESE JOURNAL OF APPLIED PHYSICS, 1980, 19 (12) :L735-L738

[8] ATOMICALLY PRECISE SUPERLATTICE POTENTIAL IMPOSED ON A 2-DIMENSIONAL ELECTRON-GAS [J].

STORMER, HL ;

PFEIFFER, LN ;

BALDWIN, KW ;

WEST, KW ;

SPECTOR, J .

APPLIED PHYSICS LETTERS, 1991, 58 (07) :726-728

[9] OPTIMUM GROWTH-CONDITIONS OF GAAS(111)B LAYERS FOR GOOD ELECTRICAL-PROPERTIES BY MOLECULAR-BEAM EPITAXY [J].

TSUTSUI, K ;

MIZUKAMI, H ;

ISHIYAMA, O ;

NAKAMURA, S ;

FURUKAWA, S .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1990, 29 (03) :468-474

[10] ALGAAS/GAAS(111) HETEROSTRUCTURES GROWN BY MOLECULAR-BEAM EPITAXY [J].

VINA, L ;

WANG, WI .

APPLIED PHYSICS LETTERS, 1986, 48 (01) :36-37