CALCULATION OF DEPOSITION UNIFORMITY IN RF SPUTTERING

被引:11
作者
BRODIE, I
机构
来源
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY | 1969年 / 6卷 / 05期
关键词
D O I
10.1116/1.1492710
中图分类号
O59 [应用物理学];
学科分类号
摘要
Desposition uniformities in RF sputtering was calculated for several device geometries including the '%'peak'%' configuration of adacent retangular targets, the disk type, and coaxial cylinder targets and substrate holders. Areas over which deposition uniformities are predicted to be plus or minus 1 to 10% were computed and the results compared with experiments.
引用
收藏
页码:795 / &
相关论文
共 9 条
[1]   DIELECTRIC THIN FILMS THROUGH RF SPUTTERING [J].
DAVIDSE, PD ;
MAISSEL, LI .
JOURNAL OF APPLIED PHYSICS, 1966, 37 (02) :574-&
[2]  
HERTE LF, PRIVATE COMMUNICATIO
[3]  
HOLLAND L, 1963, VACUUM DEPOSITION TH, P148
[4]  
KLOSS F, 1967, SEMICOND PROD SOLID, V10, P45
[5]  
LOTHROP CF, 1967, 14 P NATL VAC S AVS
[6]  
REYNOLDS RW, 1952, PHYS REV, V88, P418
[7]  
SCHWARTZ GC, 15 NATL VAC S AVS
[8]  
von Hippel A, 1926, ANN PHYS-BERLIN, V81, P1043
[9]   ANGULAR DISTRIBUTION OF SPUTTERED MATERIAL [J].
WEHNER, GK ;
ROSENBERG, D .
JOURNAL OF APPLIED PHYSICS, 1960, 31 (01) :177-179