未找到相关数据
GROWTH OF SINGLE CRYSTAL GAP FROM ORGANOMETALLIC SOURCES
被引：20
作者：
THOMAS, RW
机构：
关键词：
D O I：
10.1149/1.2411559
中图分类号：
O646 [电化学、电解、磁化学];
学科分类号：
081704 ;
摘要：
Single-crystal growth of GaP on the (111) face of a silicon substrate has been achieved at atmospheric pressure by the thermal decomposition of a gas-phase mixture of gallium triethyl and phosphorus triethyl at 485 C. A word of caution is included on the reactivity and toxicity of these organometallic compounds. Present work on the growth of thicker films and the electric characterization of the resulting heterojunctions is to be reported at a later date.
引用
收藏
页码：1449 / &
相关论文