CHARACTERIZATION OF A TOP-ILLUMINATED P-I-N-DIODE WITH AN INDIUM TIN OXIDE CONTACT

被引:6
作者
ZIRNGIBL, M
HU, Y
SACHOT, R
ILEGEMS, M
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D O I
10.1063/1.101170
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O59 [应用物理学];
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页码:2076 / 2078
页数:3
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共 5 条
[1]   TRANSPARENT CONDUCTORS - A STATUS REVIEW [J].
CHOPRA, KL ;
MAJOR, S ;
PANDYA, DK .
THIN SOLID FILMS, 1983, 102 (01) :1-46
[2]   USE OF TRANSPARENT INDIUM TIN OXIDE TO FORM A HIGHLY EFFICIENT 20-GHZ SCHOTTKY-BARRIER PHOTODIODE [J].
PARKER, DG .
ELECTRONICS LETTERS, 1985, 21 (18) :778-778
[3]   INDIUM TIN OXIDE GAAS PHOTODIODES FOR MILLIMETRIC-WAVE APPLICATIONS [J].
PARKER, DG ;
SAY, PG .
ELECTRONICS LETTERS, 1986, 22 (23) :1266-1267
[4]  
SCHMID P, 1983, REV SCI INSTRUM, V55, P1854
[5]   100 GHZ BANDWIDTH PLANAR GAAS SCHOTTKY PHOTO-DIODE [J].
WANG, SY ;
BLOOM, DM .
ELECTRONICS LETTERS, 1983, 19 (14) :554-555