ELECTRONIC THEORY OF SI-GE SOLID-SOLUTIONS

被引：23

作者：

SOMA, T

机构：

[1] Department of Applied Physics and Mathematics, Mining College, Akita University

来源：

PHYSICA STATUS SOLIDI B-BASIC RESEARCH | 1979年 / 95卷 / 02期

关键词：

D O I：

10.1002/pssb.2220950212

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

The pseudopotential theory of covalent crystals is applied to Si1−xGex systems using the virtual crystal approximation, the pseudo alloy atom model, and the ordered zinc‐blende‐type lattice (Si0.5Ge0.5). Calculated values of the equilibrium point are in good agreement with the experimental lattice constants. But, at the low temperatures, the phase mixture Si1−x + Gex is favourable compared with the disordered solid solution. Copyright © 1979 WILEY‐VCH Verlag GmbH & Co. KGaA

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页码：427 / 431

页数：5

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