COMPARISON OF AL AND TIPTAU METALLIZATIONS ON A GAAS-MESFET WITH GEMOW OHMIC CONTACTS

被引：4

作者：

MERKEL, KG

BRIGHT, VM

ROBINSON, GD

HUANG, CI

TROMBLEY, GJ

机构：

[1] UNIV CALIF SANTA BARBARA,DEPT ELECT & COMP ENGN,SANTA BARBARA,CA 93106

[2] WRIGHT LAB,SOLID STATE ELECTR DIRECTORATE,WRIGHT PATTERSON AFB,OH 45433

来源：

ELECTRONICS LETTERS | 1993年 / 29卷 / 11期

关键词：

SEMICONDUCTOR DEVICES AND MATERIALS; OHMIC CONTACTS; FIELD-EFFECT TRANSISTORS;

D O I：

10.1049/el:19930675

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Metal-semiconductor field effect transistors (MESFETs) were compared using either TiPtAu or Al as both gate metal and interconnect metal to GeMoW source/drain contacts. The GeMoW/Al MESFET demonstrated superior I-V characteristics following thermal cycling at 500-degrees-C. These results demonstrate a complete device and interconnect metallisation scheme capable of withstanding thermal stressing at 500-degrees-C.

引用

页码：1012 / 1013

页数：2