REACTION OF OXYGEN WITH SI(111) AND (100) - CRITICAL CONDITIONS FOR THE GROWTH OF SIO2

被引：268

作者：

SMITH, FW

GHIDINI, G

机构：

来源：

JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1982年 / 129卷 / 06期

关键词：

D O I：

10.1149/1.2124122

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

引用

页码：1300 / 1306

页数：7

共 17 条

[1] ADSORPTION OF OXYGEN ON SILICON [J].

EISINGER, J ;

LAW, JT .

JOURNAL OF CHEMICAL PHYSICS, 1959, 30 (02) :410-412

[2] KINETICS AND MECHANISM OF LOW-PRESSURE, HIGH-TEMPERATURE OXIDATION OF SILICON .2. [J].

GELAIN, C ;

CASSUTO, A ;

LEGOFF, P .

OXIDATION OF METALS, 1971, 3 (02) :139-&

[3]

GHIDINI G, UNPUB

[4] HIGH-TEMPERATURE OXIDATION, REDUCTION, AND VOLATILIZATION REACTIONS OF SILICON AND SILICON-CARBIDE [J].

GULBRANSEN, EA ;

JANSSON, SA .

OXIDATION OF METALS, 1972, 4 (03) :181-+

[5]

GULBRANSEN EA, 1970, HETEROGENEOUS KINETI, P181

[6] MORPHOLOGY AND ELECTRONIC-STRUCTURE OF SI-SIO2 INTERFACES AND SI SURFACES [J].

HELMS, CR .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1979, 16 (02) :608-614

[7]

HERMAN F, 1978, PHYSICS SIO2 ITS INT, P333

[8] SILICON MONOXIDE PRESSURES DUE TO REACTION BETWEEN SOLID SILICON AND SILICA [J].

KUBASCHEWSKI, O ;

CHART, TG .

JOURNAL OF CHEMICAL THERMODYNAMICS, 1974, 6 (05) :467-476

[9] LOW VOLTAGE ELECTRON DIFFRACTION STUDY OF OXIDATION AND REDUCTION OF SILICON [J].

LANDER, JJ ;

MORRISON, J .

JOURNAL OF APPLIED PHYSICS, 1962, 33 (06) :2089-&

[10]

Lever R. F., 1970, Surface Science, V19, P435, DOI 10.1016/0039-6028(70)90052-X

← 1 2 →