MATERIALS MODIFICATION - DOPING OF DIAMOND BY ION-IMPLANTATION

被引：14

作者：

PRINS, JF

机构：

[1] Schonland Research Centre for Nuclear Sciences, University of the Witwatersrand, Johannesburg

来源：

MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY | 1992年 / 11卷 / 1-4期

关键词：

D O I：

10.1016/0921-5107(92)90216-V

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

A selective overview is given of the modifications found in diamond substrates during ion implantation and annealing. Special attention is given to the origin and development of the cold-implantation-rapid annealing technique to dope diamond. Some of the latest results are compared with the original, overdoped and overcompensated layers which were manufactured by this method. The conclusion is reached that boron-doped layers may now be generated which approach the quality of natural p-type (type IIb) diamonds.

引用

页码：219 / 226

页数：8

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