SURFACE CORE-LEVEL SHIFTS AND RELAXATION OF GROUP-IVA-ELEMENT CHALCOGENIDE SEMICONDUCTORS

被引：25

作者：

ALLAN, G

机构：

[1] Laboratoire d'Etudes des Surfaces et Interfaces, Institut Supérieur d'Electronique du Nord, F-59046 Lille Cedex

来源：

PHYSICAL REVIEW B | 1991年 / 43卷 / 12期

关键词：

D O I：

10.1103/PhysRevB.43.9594

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The (100) surface core-level shifts of PbS, PbSe, PbTe, GeTe, and SnTe are calculated with use of a simple molecular model. For the unrelaxed surface, the calculated values are quite large and increase with the compound ionicity. This discrepancy with the available experimental result for PbS suggests a large (100) surface relaxation annealing the effects of the surface on core-level shifts.

引用

页码：9594 / 9598

页数：5

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