ENHANCED IN SURFACE SEGREGATION DURING MOLECULAR-BEAM EPITAXY OF (IN,GA)AS ON (H11) GAAS FOR SMALL VALUES OF H

被引：30

作者：

ILG, M ^{[1
]}

PLOOG, KH ^{[1
]}

机构：

[1] PAUL DRUDE INST FESTKORPERELEKTRON 5-7,D-10117 BERLIN,GERMANY

来源：

PHYSICAL REVIEW B | 1993年 / 48卷 / 15期

关键词：

D O I：

10.1103/PhysRevB.48.11512

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

We present a systematic study of indium surface segregation during molecular-beam epitaxy of (In,Ga)As on (h11) GaAs. Ultrathin InAs monolayer structures serve as segregation probes and are investigated by high-resolution x-ray diffraction and photoluminescence spectroscopy. An envelope-function analysis of the photoluminescence data reveals a strong enhancement of In segregation on the GaAs (111), (211), and (311) surfaces with respect to their (100) counterpart. Reflection high-energy electron-diffraction measurements confirm this observation, which is of fundamental importance for the understanding of non-(100)-oriented semiconductor heterostructures.

引用

页码：11512 / 11515

页数：4

共 30 条

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