IMPACT IONIZATION CURRENT IN MOS DEVICES

被引：18

作者：

LATTIN, WW ^{[1
]}

RUTLEDGE, JL ^{[1
]}

机构：

[1] MOTOROLA INC,SEMICOND PROD DIV,PHOENIX,AZ 85008

来源：

关键词：

D O I：

10.1016/0038-1101(73)90205-0

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：1043 / 1046

页数：4

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