CARRIER MOBILITY MEASUREMENT

被引:11
作者
YOSHINO, K
机构
来源
IEEE TRANSACTIONS ON ELECTRICAL INSULATION | 1986年 / 21卷 / 06期
关键词
D O I
10.1109/TEI.1986.349014
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
引用
收藏
页码:999 / 1006
页数:8
相关论文
共 48 条
[1]   AVALANCHE BREAKDOWN IN NORMAL-HEXANE [J].
ARII, K ;
KITANI, I ;
KAWAMURA, M .
JOURNAL OF PHYSICS D-APPLIED PHYSICS, 1979, 12 (05) :787-796
[2]   ELECTRICAL-CONDUCTIVITY IN DOPED POLYACETYLENE [J].
CHIANG, CK ;
FINCHER, CR ;
PARK, YW ;
HEEGER, AJ ;
SHIRAKAWA, H ;
LOUIS, EJ ;
GAU, SC ;
MACDIARMID, AG .
PHYSICAL REVIEW LETTERS, 1977, 39 (17) :1098-1101
[3]  
FUJII H, 1980, T IEE JAPAN, V100, P1
[4]  
Gu H. B., 1986, Technology Reports of the Osaka University, V36, P323
[5]   TEMPERATURE-DEPENDENCE OF CARRIER MOBILITY IN POLYETHYLENE TEREPHTHALATE [J].
HAYASHI, K ;
YOSHINO, K ;
INUISHI, Y .
JAPANESE JOURNAL OF APPLIED PHYSICS, 1973, 12 (07) :1089-1090
[6]   CARRIER MOBILITIES IN INSULATING POLYMERS MEASURED BY TIME OF FLIGHT METHOD [J].
HAYASHI, K ;
YOSHINO, K ;
INUISHI, Y .
JAPANESE JOURNAL OF APPLIED PHYSICS, 1975, 14 (01) :39-45
[7]  
HAYASHI K, 1978, T IEE JPN A, V98, P273
[8]   ELECTRICAL-CONDUCTIVITY AND ELECTRON-SPIN-RESONANCE STUDIES IN IODINE-DOPED POLYTHIOPHENE FROM SEMICONDUCTOR TO METALLIC REGIME [J].
HAYASHI, S ;
KANETO, K ;
YOSHINO, K ;
MATSUSHITA, R ;
MATSUYAMA, T .
JOURNAL OF THE PHYSICAL SOCIETY OF JAPAN, 1986, 55 (06) :1971-1980
[9]  
IEDA M, 1968, J IEE JPN, V88, P1107
[10]  
KANEKO F, 1985, T IEE JPN A, V105, P421