EFFECT OF DEPOSITION PARAMETERS ON THE STRUCTURAL-PROPERTIES AND T(C) OF YBACUO FILMS BY HIGH-PRESSURE OXYGEN SPUTTERING

被引：14

作者：

MURALIDHAR, GK

RAO, GM

RAGHUNATHAN, J

MOHAN, S

机构：

[1] Instrumentation and Services Unit, Indian Institute of Science, Bangalore

来源：

PHYSICA C | 1992年 / 192卷 / 3-4期

关键词：

D O I：

10.1016/0921-4534(92)90852-4

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Superconducting YBa2Cu3O7-delta films were formed using a high pressure oxygen sputtering technique (HOST). The structural properties and the transition temperature of these films are correlated with their deposition parameters such as the oxygen pressure, substrate temperature and inter-electrode distance (IED). It was shown that films prepared at an oxygen pressure of 2.4 mbar, substrate temperature of 750-degrees-C and IED of around 19 mm produced good quality as-deposited superconducting films with transition temperature T(c)(0) of 88.5 K and T(c onset) of 92 K. The critical currents of these films were around 5 x 10 A/cm2.

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页码：447 / 452

页数：6

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