ADMITTANCE MEASUREMENTS OF SI-SIO2 INTERFACE STATES UNDER OPTICAL ILLUMINATION

被引：25

作者：

POON, TC

CARD, HC

机构：

来源：

JOURNAL OF APPLIED PHYSICS | 1980年 / 51卷 / 11期

关键词：

D O I：

10.1063/1.327552

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：5880 / 5888

页数：9

共 53 条

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