NONPARABOLICITY IN THE CONDUCTION-BAND OF II-VI-SEMICONDUCTORS

The details of the conduction band structure (spin-splitting, nonparabolicity, and warping) for the II-VI semiconductors ZnTe, ZnSe, and CdTe are studied using an effective 2 x 2 k.p (or ''envelon'') Hamiltonian, which contains terms up to fourth order in the electron momentum operator. On the basis of known parameter sets for the II-VI compounds we make predictions for the spin-splitting of the conduction band and the anisotropy and spin-splitting of cyclotron resonance. The magnitude of these effects is compared with those obtained for GaAs and InP.