HEAVILY DOPED SEMICONDUCTOR-LASERS

被引：7

作者：

COPELAND, JA

机构：

来源：

IEEE JOURNAL OF QUANTUM ELECTRONICS | 1981年 / 17卷 / 11期

关键词：

D O I：

10.1109/JQE.1981.1070680

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：2187 / 2190

页数：4

共 11 条

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ELECTRONICS LETTERS, 1980, 16 (18) :713-714

[4]

CASEY HC, 1978, HETEROSTRUCTURE LA A, P110

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HALL RN, 1959, P I ELEC ENG B, V106, P931

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LEE TP, 1978, IEEE J QUANTUM ELECT, V14, P150

[8] SATURABLE OPTICAL-ABSORPTION OF THE DEEP TE-COMPLEX CENTER IN AL0.4GA0.6AS [J].

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PHYSICAL REVIEW B, 1979, 20 (02) :654-663

[9] INTERFACIAL RECOMBINATION VELOCITY IN GAALAS-GAAS HETEROSTRUCTURES [J].

NELSON, RJ ;

SOBERS, RG .

APPLIED PHYSICS LETTERS, 1978, 32 (11) :761-763

[10] CALCULATED SPECTRAL DEPENDENCE OF GAIN IN EXCITED GAAS [J].

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JOURNAL OF APPLIED PHYSICS, 1976, 47 (12) :5382-5386

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