RESONANT RAMAN-SCATTERING AND EXCITON LOCALIZATION IN GAP-N AND GAASXP1-X-N

被引：10

作者：

GERSHONI, D

COHEN, E

RON, A

STURGE, MD

机构：

[1] TECHNION ISRAEL INST TECHNOL,INST SOLID STATE,HAIFA,ISRAEL

[2] DARTMOUTH COLL,HANOVER,NH 03755

来源：

JOURNAL OF LUMINESCENCE | 1987年 / 38卷 / 1-6期

关键词：

D O I：

10.1016/0022-2313(87)90113-X

中图分类号：

O43 [光学];

学科分类号：

070207 ; 0803 ;

摘要：

引用

页码：230 / 233

页数：4

共 8 条

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[8] OPTICAL DEPHASING AND EXCITATION TRANSFER OF AN IMPURITY-BOUND EXCITON IN A SEMICONDUCTOR - PHOTON-ECHO EXPERIMENTS ON GAP-N [J].

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WIERSMA, DA .

PHYSICAL REVIEW B, 1985, 32 (12) :8108-8115

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