FIELD-EFFECT TRANSISTOR WITH DIPHTHALOCYANINE THIN-FILM

[1] SOLID-STATE MICROELECTROCHEMISTRY - ELECTRICAL CHARACTERISTICS OF A SOLID-STATE MICROELECTROCHEMICAL TRANSISTOR BASED ON POLY(3-METHYLTHIOPHENE) [J]. JOURNAL OF THE AMERICAN CHEMICAL SOCIETY, 1987, 109 (07) : 2197 - 2199

[2] CLARISSE C, 1987, INORG CHIM ACTA, V130, P139

[3] CLARISSE C, 1987, Patent No. 15490

[4] FIELD-EFFECT TRANSISTOR WITH POLYTHIOPHENE THIN-FILM [J]. SYNTHETIC METALS, 1987, 18 (1-3) : 699 - 704

[5] THE 1ST FIELD-EFFECT TRANSISTOR BASED ON AN INTRINSIC MOLECULAR SEMICONDUCTOR [J]. CHEMICAL PHYSICS LETTERS, 1987, 142 (1-2) : 103 - 105

[6] PN+ JUNCTION IN AN IMPLANTED ELECTROACTIVE POLYMER - POLY(PARAPHENYLENE) [J]. ELECTRONICS LETTERS, 1988, 24 (07) : 383 - 384

[7] ELECTRONIC DEVICES INCORPORATING STABLE PHTHALOCYANINE LANGMUIR-BLODGETT-FILMS [J]. THIN SOLID FILMS, 1985, 132 (1-4) : 113 - 123

[8] Sze S. M., 1981, PHYS SEMICONDUCTOR D, P315

[1] SOLID-STATE MICROELECTROCHEMISTRY - ELECTRICAL CHARACTERISTICS OF A SOLID-STATE MICROELECTROCHEMICAL TRANSISTOR BASED ON POLY(3-METHYLTHIOPHENE) [J]. JOURNAL OF THE AMERICAN CHEMICAL SOCIETY, 1987, 109 (07) : 2197 - 2199

[2] CLARISSE C, 1987, INORG CHIM ACTA, V130, P139

[3] CLARISSE C, 1987, Patent No. 15490

[4] FIELD-EFFECT TRANSISTOR WITH POLYTHIOPHENE THIN-FILM [J]. SYNTHETIC METALS, 1987, 18 (1-3) : 699 - 704

[5] THE 1ST FIELD-EFFECT TRANSISTOR BASED ON AN INTRINSIC MOLECULAR SEMICONDUCTOR [J]. CHEMICAL PHYSICS LETTERS, 1987, 142 (1-2) : 103 - 105

[6] PN+ JUNCTION IN AN IMPLANTED ELECTROACTIVE POLYMER - POLY(PARAPHENYLENE) [J]. ELECTRONICS LETTERS, 1988, 24 (07) : 383 - 384

[7] ELECTRONIC DEVICES INCORPORATING STABLE PHTHALOCYANINE LANGMUIR-BLODGETT-FILMS [J]. THIN SOLID FILMS, 1985, 132 (1-4) : 113 - 123

[8] Sze S. M., 1981, PHYS SEMICONDUCTOR D, P315