IMPLANTATION PROFILES OF 10-KEV 85KR 20-KEV 85KR AND 40-KEV-85KR IN GALLIUM ARSENIDE

The possibility of making semiconductor devices by implantation of impurity atoms requires a knowledge of their depth distribution or implantation profile. The use of a micromechanical sectioning technique has made such measurements possible over depths of as small as 30 Å. These measurements have been made as a function of incident energy, crystallographic direction and bombardment dose of radioactive krypton in single crystals of GaAs. It is concluded that the ion implantation of GaAs is a viable process, that GaAs suffers ion bombardment induced damage at a relatively low dose and that the energy and orientation dependence are similar to those seen previously in face-centred cubic materials. © 1969 Chapman and Hall.