STRESS-INDUCED SHIFT OF THE CURIE-POINT IN EPITAXIAL PBTIO3 THIN-FILMS

被引：208

作者：

ROSSETTI, GA ^{[1
]}

CROSS, LE ^{[1
]}

KUSHIDA, K ^{[1
]}

机构：

[1] HITACHI LTD,CENT RES LAB,KOKUBUNJI,TOKYO 185,JAPAN

来源：

APPLIED PHYSICS LETTERS | 1991年 / 59卷 / 20期

关键词：

D O I：

10.1063/1.105940

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

A 50-degrees-C shift in Curie temperature has been observed for c-axis oriented PbTiO3 thin films using x-ray diffraction. An analysis of the electrostrictive strain based on the Devonshire thermodynamic formalism showed that the shift in the Curie point for these films can be plausibly explained by an effective two-dimensional compressive stress of almost-equal-to 400 MPa. The single-domain, single-crystal dielectric susceptibility (eta-33) and piezoelectric coefficient (d33) were calculated and found to be relatively unaffected, at room temperature, by a compressive stress of this magnitude.

引用

页码：2524 / 2526

页数：3

共 9 条

[1] SIGN NOTATION IN FERROELECTRIC FREE-ENERGY FUNCTIONS [J].