HALL AND DRIFT MOBILITY OF POLAR P-TYPE SEMICONDUCTORS .2. APPLICATION TO ZNTE, CDTE, AND ZNSE

被引:33
作者
KRANZER, D
机构
[1] TH VIENNA, INST PHYS ELEKTR, VIENNA, AUSTRIA
[2] LUDWIG BOLTZMANN INST FESTKORPER PHYS, VIENNA, AUSTRIA
来源
JOURNAL OF PHYSICS C-SOLID STATE PHYSICS | 1973年 / 6卷 / 20期
关键词
D O I
10.1088/0022-3719/6/20/011
中图分类号
O469 [凝聚态物理学];
学科分类号
070205 ;
摘要
引用
收藏
页码:2977 / 2987
页数:11
相关论文
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[10]  
KRANZER D, TO BE PUBLISHED