HALL AND DRIFT MOBILITY OF POLAR P-TYPE SEMICONDUCTORS .2. APPLICATION TO ZNTE, CDTE, AND ZNSE

被引：33

作者：

KRANZER, D

机构：

[1] TH VIENNA, INST PHYS ELEKTR, VIENNA, AUSTRIA

[2] LUDWIG BOLTZMANN INST FESTKORPER PHYS, VIENNA, AUSTRIA

来源：

JOURNAL OF PHYSICS C-SOLID STATE PHYSICS | 1973年 / 6卷 / 20期

关键词：

D O I：

10.1088/0022-3719/6/20/011

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

引用

页码：2977 / 2987

页数：11

共 26 条

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DELVIN SS, 1967, PHYSICS CHEMISTRY

[8] THE THEORY OF ELECTRONIC CONDUCTION IN POLAR SEMI-CONDUCTORS [J].

HOWARTH, DJ ;

SONDHEIMER, EH .

PROCEEDINGS OF THE ROYAL SOCIETY OF LONDON SERIES A-MATHEMATICAL AND PHYSICAL SCIENCES, 1953, 219 (1136) :53-74

[9] HALL AND DRIFT MOBILITY OF POLAR P-TYPE SEMICONDUCTORS .1. THEORY [J].

KRANZER, D .

JOURNAL OF PHYSICS C-SOLID STATE PHYSICS, 1973, 6 (20) :2967-2976

[10]

KRANZER D, TO BE PUBLISHED

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