EPITAXIAL-GROWTH OF CUBIC ZNSXSE1-X BY VAPOR-PHASE TRANSPORT

被引：9

作者：

ETIENNE, D

SOONCKINDT, L

BOUGNOT, G

机构：

来源：

JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1980年 / 127卷 / 08期

关键词：

D O I：

10.1149/1.2130005

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

引用

页码：1800 / 1806

页数：7

共 21 条

[1] EPITAXIAL GROWTH OF ZINC SELENIDE ON GALLIUM ARSENIDE [J].

BOUGNOT, G ;

ETIENNE, D ;

CHEVRIER, J ;

BOHE, C .

MATERIALS RESEARCH BULLETIN, 1971, 6 (03) :145-&

[2] GROWTH OF ZNSE SINGLE CRYSTALS FROM THE VAPOUR PHASE [J].

BURR, KF ;

WOODS, J .

JOURNAL OF CRYSTAL GROWTH, 1971, 9 (01) :183-&

[3] GROWTH AND CHARACTERIZATION OF ZNSE AND HOMOGENEOUS ZNSXSE1-X CRYSTALS [J].

CATANO, A ;

KUN, ZK .

JOURNAL OF CRYSTAL GROWTH, 1976, 33 (02) :324-330

[4] EVAPORATION OF ZINC SELENIDE BY FORCED VAPOR TRANSPORT IN ARGON AND HYDROGEN FLOWS [J].

CHEVRIER, J ;

ETIENNE, D ;

BOUGNOT, G .

REVUE DE PHYSIQUE APPLIQUEE, 1974, 9 (01) :315-321

[5] HETERO-EPITAXY OF ZNSE ON GAAS BY OPEN TUBE TRANSPORT [J].

CHEVRIER, J ;

GALIBERT, G ;

ETIENNE, D ;

BOUGNOT, G .

JOURNAL OF CRYSTAL GROWTH, 1975, 28 (01) :109-116

[6] GROWTH OF ZINC SULFIDE BY IODINE TRANSPORT [J].

DANGEL, PN ;

WUENSCH, BJ .

JOURNAL OF CRYSTAL GROWTH, 1973, 19 (01) :1-4

[7] VARIATION WITH COMPOSITION OF E0 AND E0+ DELTA-0 GAPS IN ZNSX SE1-X ALLOYS [J].

EBINA, A ;

FUKUNAGA, E ;

TAKAHASHI, T .

PHYSICAL REVIEW B, 1974, 10 (06) :2495-2500

[8] GROWTH AND PROPERTIES OF EPITAXIAL ZNSE AND ZNSXSE1-X FILMS ON FLUORINE [J].

ETIENNE, D ;

CHEVRIER, J ;

BOUGNOT, G .

JOURNAL OF CRYSTAL GROWTH, 1977, 37 (02) :147-150

[9]

Holton W. C., 1969, Journal of Crystal Growth, V6, P97, DOI 10.1016/0022-0248(69)90099-2

[10]

HURLE DTJ, 1967, J PHYS CHEM SOLIDS S, V1, P241

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