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A UNIFIED MOBILITY MODEL FOR DEVICE SIMULATION .1. MODEL-EQUATIONS AND CONCENTRATION-DEPENDENCE

被引：686
作者：
KLAASSEN, DBM
机构：
[1] Philips Research Laboratories, 5600 JA Eindhoven
来源：
SOLID-STATE ELECTRONICS | 1992年 / 35卷 / 07期
关键词：
D O I：
10.1016/0038-1101(92)90325-7
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
The first physics-based analytical model is presented that unifies the descriptions of majority and minority carrier mobility and that includes screening of the impurities by charge carriers, electron-hole scattering, clustering of impurities and the full temperature dependence of both majority and minority carrier mobility. Using this model, excellent agreement is obtained with published experimental data on Si. The model is especially suited for device simulation purposes, because the carrier mobility is given as an analytical function of the donor, acceptor, electron and hole concentrations and of the temperature.
引用
收藏
页码：953 / 959
页数：7
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