ALUMINUM AND GALLIUM IMPURITY EFFECTS ON PHOTOLUMINESCENCE FROM ELECTRON-IRRADIATED, PULLED SILICON

被引：15

作者：

NOONAN, JR

KIRKPATRICK, CG

STREETMAN, BG

机构：

[1] UNIV ILLINOIS, COORDINATED SCI LAB, URBANA, IL 61801 USA

[2] UNIV ILLINOIS, DEPT ELECT ENGN, URBANA, IL 61801 USA

来源：

关键词：

D O I：

10.1016/0038-1098(74)90530-4

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

引用

页码：1055 / 1059

页数：5

共 10 条

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COMPTON, WD
NOONAN, JR
STREETMA.BG
[J]. JOURNAL OF APPLIED PHYSICS, 1973, 44 (12) : 5402 - 5410
[4] NOONAN JR, 1974, R645 DEF DOC CENT TI
[5] NOONAN JR, 1974, THESIS U ILLINOIS
[6] RECOMBINATION LUMINESCENCE IN IRRADIATED SILICON
SPRY, RJ
COMPTON, WD
[J]. PHYSICAL REVIEW, 1968, 175 (03): : 1010 - +
[7] DEFECTS IN IRRADIATED SILICON - ELECTRON PARAMAGNETIC RESONANCE AND ELECTRON-NUCLEAR DOUBLE RESONANCE OF ALUMINUM-VACANCY PAIR
WATKINS, GD
[J]. PHYSICAL REVIEW, 1967, 155 (03): : 802 - &
[8] WATKINS GD, 1964, RADIATION DAMAGE SEM
[9] WATKINS GD, 1968, RADIATION EFFECTS SE
[10] YUKHNEVICH AV, 1965, FIZ TVERD TELA+, V7, P259