1-THZ-BANDWIDTH PROBER FOR HIGH-SPEED DEVICES AND INTEGRATED-CIRCUITS

被引：85

作者：

VALDMANIS, JA

机构：

[1] AT&T Bell Lab, Murray Hill, NJ,, USA, AT&T Bell Lab, Murray Hill, NJ, USA

来源：

ELECTRONICS LETTERS | 1987年 / 23卷 / 24期

关键词：

INTEGRATED CIRCUITS - OPTICAL VARIABLES MEASUREMENT;

D O I：

10.1049/el:19870905

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We describe an external electro-optic technique for characterizing high-speed electrical signals in two-dimensional electrode structures of devices and integrated circuits fabricated on any substrate material. A temporal resolution of less than 300 fs, corresponding to a bandwidth in excess of 1 THz, has been achieved.

引用

页码：1308 / 1310

页数：3

共 5 条

[1] EXCITATION OF COHERENT PHONON POLARITONS WITH FEMTOSECOND OPTICAL PULSES
CHEUNG, KP
AUSTON, DH
[J]. PHYSICAL REVIEW LETTERS, 1985, 55 (20) : 2152 - 2155
[2] NONCONTACT ELECTROOPTIC SAMPLING WITH A GAAS INJECTION-LASER
NEES, J
MOUROU, G
[J]. ELECTRONICS LETTERS, 1986, 22 (17) : 918 - 919
[3] SUBPICOSECOND ELECTRICAL SAMPLING
VALDMANIS, JA
MOUROU, GA
GABEL, CW
[J]. IEEE JOURNAL OF QUANTUM ELECTRONICS, 1983, 19 (04) : 664 - 667
[4] VALDMANIS JA, 1987, 1987 P C PIC EL OPT
[5] DIRECT ELECTRO-OPTIC SAMPLING OF GAAS INTEGRATED-CIRCUITS
WEINGARTEN, KJ
RODWELL, MJW
HEINRICH, HK
KOLNER, BH
BLOOM, DM
[J]. ELECTRONICS LETTERS, 1985, 21 (17) : 765 - 766

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