PERFORMANCE OF A NEW HIGH-INTENSITY SILICON SOLAR-CELL

被引：7

作者：

FRANK, RI ^{[1
]}

KAPLOW, R ^{[1
]}

机构：

[1] MIT,CTR MAT SCI & ENGN,CAMBRIDGE,MA 02139

来源：

APPLIED PHYSICS LETTERS | 1979年 / 34卷 / 01期

关键词：

D O I：

10.1063/1.90560

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

A new silicon solar cell, designed to have improved electrical, optical, and thermal transfer characteristics at very high incident light intensities, has been fabricated and provides experimental verification of the basic design concepts. The AM1 efficiency for nonoptimized cells is 12.8% at 25°C. At 300 suns the efficiency increases to 19%. It is shown that efficiencies of over 25% are possible for this type of cell in a more-optimized form at intensities of ∼500-1000 suns.

引用

页码：65 / 67

页数：3