BACKSIDE-ILLUMINATED HGCDTE-CDTE PHOTO-DIODES

被引：36

作者：

LANIR, M

WANG, CC

VANDERWYCK, AHB

机构：

[1] Science Center, Rockwell International, Thousand Oaks

来源：

APPLIED PHYSICS LETTERS | 1979年 / 34卷 / 01期

关键词：

D O I：

10.1063/1.90595

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

This letter reports the first realization of backside-illuminated HgCdTe/CdTe photodiodes prepared by a liquid-phase-epitaxy technique. The thermal noise of these diodes is lower than that of bulk HgCdTe diodes fabricated under otherwise similar conditions. This is explained by an analytical model based on material parameters and the geometry of n +-p diodes.

引用

页码：50 / 52

页数：3

共 7 条

[1]

BORELLO SR, 1978, P SPIE, V132, P27

[2]

DORNHOUS R, 1976, SOLID STATE PHYSICS

[3] MINORITY-CARRIER-LIFETIME DETERMINATION IN HG0.68CD0.32TE [J].

LANIR, M ;

VANDERWYCK, AHB ;

WANG, CC .

JOURNAL OF APPLIED PHYSICS, 1978, 49 (12) :6182-6184

[4]

LONG D, 1977, TOPICS APPLIED PHYSI, V19

[5] INFRARED FOCAL PLANES IN INTRINSIC SEMICONDUCTORS [J].

LONGO, JT ;

CHEUNG, DT ;

ANDREWS, AM ;

WANG, CC ;

TRACY, JM .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1978, 25 (02) :213-232

[6]

Mckelvey J.P, 1966, SOLID STATE SEMICOND, P422

[7]

ZANIO K, 1978, SEMICONDUCT SEMIMET, V13, P198

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