SIMPLIFIED THEORY OF REACTIVE CLOSE-SPACED VAPOR TRANSPORT

被引:18
作者
BAILLY, F
COHENSOLAL, G
MIMILAARROYO, J
机构
[1] CNRS, Laboratoire de Physique des Solides, Bellevue
关键词
epitaxy; semiconductors; thermodynamics; transport;
D O I
10.1149/1.2129340
中图分类号
O646 [电化学、电解、磁化学];
学科分类号
081704 ;
摘要
A simplified model is proposed to determine the thermodynamic constants of the transport reaction in a close-spaced configuration, even when the reacting species are unknown. For example, the enthalpy variation, the activation energies of condensation, and sublimation in the water vapor transport of CdTe are determined (ΔHeq. = 22, Qcond. = 9.2, and Qsubl. = 31.2 in kcal/mole-1). The model is useful for interpreting the experimental results in epitaxial processes. In the low pressure iodine transport of silicon, it is shown that the growth rate is not a diffusion controlled process; from the energy ΔHeq = -16.5 kcal/mole-1 for the reaction Si + 21 SiLe, we found Qcond. = -8 and Qsubl. = -24.5 (kcal/mole-1). An important result of the analysis is that determination of enthalpy variation cannot be obtained only from the slope of the growth rate-temperature dependence. © 1979, The Electrochemical Society, Inc. All rights reserved.
引用
收藏
页码:1604 / 1608
页数:5
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