EFFECTS OF AL FILMS ON ION-IMPLANTED SI

被引：21

作者：

LEE, DH

HART, RR

MARSH, OJ

机构：

来源：

APPLIED PHYSICS LETTERS | 1972年 / 20卷 / 02期

关键词：

D O I：

10.1063/1.1654052

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：73 / &

共 11 条

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BENNETT, HE ;

ASHLEY, EJ ;

SILVER, M .

JOURNAL OF THE OPTICAL SOCIETY OF AMERICA, 1963, 53 (09) :1089-&

[2]

Bosnell J. R., 1970, Thin Solid Films, V6, P161, DOI 10.1016/0040-6090(70)90036-2

[3]

BRODSKY MB, PRIVATE COMMUNICATIO

[4]

BRODSKY MH, 1971, B AM PHYS SOC, V16, P295

[5] OPTICAL CONSTANTS AND REFLECTANCE AND TRANSMITTANCE OF EVAPORATED ALUMINUM IN VISIBLE AND ULTRAVIOLET [J].

HASS, G ;

WAYLONIS, JE .

JOURNAL OF THE OPTICAL SOCIETY OF AMERICA, 1961, 51 (07) :719-&

[6] LOW-TEMPERATURE MIGRATION OF SILICON IN THIN LAYERS OF GOLD AND PLATINUM [J].

HIRAKI, A ;

NICOLET, MA ;

MAYER, JW .

APPLIED PHYSICS LETTERS, 1971, 18 (05) :178-&

[7] ION IMPLANTATION DAMAGE OF SILICON AS OBSERVED BY OPTICAL REFLECTION SPECTROSCOPY IN 1-EV TO 6-EV REGION [J].

KURTIN, S ;

SHIFRIN, GA ;

MCGILL, TC .

APPLIED PHYSICS LETTERS, 1969, 14 (07) :223-&

[8]

LEE DH, 1971, P INT C ION IMPLANTA

[9]

MAYER JW, 1970, ION IMPLANTATION SEM, pCH3

[10]

MOREHEAD FF, 1970, RAD EFFECTS, V66, P27

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