SIMPLIFIED CLOSED-FORM TRAP-ASSISTED TUNNELING MODEL APPLIED TO NITRIDED OXIDE DIELECTRIC CAPACITORS

被引：51

作者：

FLEISCHER, S ^{[1
]}

LAI, PT ^{[1
]}

CHENG, YC ^{[1
]}

机构：

[1] CITY POLYTECH HONG KONG,HONG KONG,HONG KONG

来源：

JOURNAL OF APPLIED PHYSICS | 1992年 / 72卷 / 12期

关键词：

D O I：

10.1063/1.351923

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Conduction has been studied in ultrathin nitrided oxide, re-oxidized nitrided oxide, and nitrogen-annealed nitrided oxide film capacitors in which the nitridation step was performed by a low-partial-pressure nitridation technique. Results indicate that, as well as some degree of barrier lowering due to the build-up of nitrogen at the injecting interface, a trap-assisted mechanism could be responsible for the enhanced conduction exhibited by the nitrided oxide devices. A simplified closed-form trap-assisted tunneling model is employed that produces a fit to the data with a trap depth of 2.1 eV. The difference between this trap model and a model requiring numerical integration was negligibly small (approximately 2%).

引用

页码：5711 / 5715

页数：5

共 19 条

[11] THERMAL NITRIDATION OF SI AND SIO2 FOR VLSI [J].