TUNNELING IONIZATION OF AUTOLOCALIZED DX(-) CENTERS IN TERAHERTZ FIELDS

被引：58

作者：

GANICHEV, SD

YASSIEVICH, IN

PRETTL, W

DIENER, J

MEYER, BK

BENZ, KW

机构：

[1] TECH UNIV MUNICH, DEPT PHYS, D-85747 GARCHING, GERMANY

[2] UNIV FREIBURG, INST KRISTALLOG, D-79104 FREIBURG, GERMANY

[3] RUSSIAN ACAD SCI, AF IOFFE PHYSICOTECH INST, ST PETERSBURG 194021, RUSSIA

来源：

PHYSICAL REVIEW LETTERS | 1995年 / 75卷 / 08期

关键词：

D O I：

10.1103/PhysRevLett.75.1590

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

Tunneling ionization of DX(-) centers in AlxGa1-xSb has been observed in terahertz radiation fields. Tunneling times have been measured for autolocalized and on-site deep impurities. It is shown that in one case the tunneling time is smaller and in the other larger than the reciprocal temperature multiplied by a universal constant due to the different tunneling trajectories. This allows one to distinguish in a direct way between the two types of configuration potentials of impurities.

引用

页码：1590 / 1593

页数：4

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