MAGNETO-OPTICAL STUDIES OF A SILICON DELTA-DOPING LAYER IN N-GAAS

被引：18

作者：

PERRY, CH

LEE, KS

ZHOU, W

WORLOCK, JM

ZRENNER, A

KOCH, F

PLOOG, K

机构：

[1] BELL COMMUN RES,RED BANK,NJ 07701

[2] TECH UNIV MUNICH,DEPT PHYS E16,D-8046 GARCHING,FED REP GER

[3] MAX PLANCK INST FESTKORPERFORSCH,D-7000 STUTTGART,FED REP GER

[4] MIT,FRANCIS BITTER NATL MAGNET LAB,CAMBRIDGE,MA 02139

来源：

SURFACE SCIENCE | 1988年 / 196卷 / 1-3期

关键词：

D O I：

10.1016/0039-6028(88)90761-3

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

引用

页码：677 / 682

页数：6

共 6 条

[1]

KOCH F, 1987, SPRINGER SER SOLID S, V71, P308

[2]

MEDLAND J, 1986, PROPERTIES GALLIUM A

[3]

Zrenner A., 1987, 18th International Conference on the Physics of Semiconductors, P1523

[4] ELECTRONIC SUBBANDS OF A DELTA-DOPING LAYER IN GAAS IN A PARALLEL MAGNETIC-FIELD [J].

ZRENNER, A ;

REISINGER, H ;

KOCH, F ;

PLOOG, K ;

MAAN, JC .

PHYSICAL REVIEW B, 1986, 33 (08) :5607-5610

[5] SUBBAND PHYSICS FOR A REALISTIC DELTA-DOPING LAYER [J].

ZRENNER, A ;

KOCH, F ;

PLOOG, K .

SURFACE SCIENCE, 1988, 196 (1-3) :671-676

[6]

ZRENNER A, 1985, 17TH P INT C PHYS SE, P325

← 1 →