LONG-WAVELENGTH (1.0-1.6-MU-M) IN0.52AL0.48AS/IN0.53(GAXAL1-X)0.47AS/IN0.53GA0.47AS METAL-SEMICONDUCTOR-METAL PHOTODETECTOR

被引：39

作者：

GRIEM, HT

RAY, S

FREEMAN, JL

WEST, DL

机构：

来源：

APPLIED PHYSICS LETTERS | 1990年 / 56卷 / 11期

关键词：

D O I：

10.1063/1.102567

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We have fabricated a metal-semiconductor-metal Schottky photodetector on a semi-insulating InP substrate using a nominally lattice-matched In 0.52Al0.48As/In0.53(GaxAl 1-x)0.47As (graded)/In0.53Ga0.47As structure grown by molecular beam epitaxy. On average the graded quaternary layer enhanced the responsivity by about 35% compared to an identical device without the graded region, reaching a maximum of 0.45 A/W at 10 V applied bias. The associated dark current was 95 nA; the dark capacitance was 90 fF. High-speed measurements with a gain-switched 1.3 μm laser diode demonstrated an instrumentation-limited impulse response of 50 ps.

引用

页码：1067 / 1068

页数：2

共 4 条

[1] OPTICAL-RESPONSE TIME OF IN0.53GA0.47AS/INP AVALANCHE PHOTO-DIODES
FORREST, SR
KIM, OK
SMITH, RG
[J]. APPLIED PHYSICS LETTERS, 1982, 41 (01) : 95 - 98
[2] SOOLER JBD, 1988, IEDM SAN FRANCISCO, P1483
[3] VANZEGHBROEK BJ, 1987, IEDM WASHINGTON, P279
[4] VERY HIGH-SPEED GAINAS METAL-SEMICONDUCTOR-METAL PHOTODIODE INCORPORATING AN ALLNAS/GALNAS GRADED SUPERLATTICE
WADA, O
NOBUHARA, H
HAMAGUCHI, H
MIKAWA, T
TACKEUCHI, A
FUJII, T
[J]. APPLIED PHYSICS LETTERS, 1989, 54 (01) : 16 - 17

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