TEMPERATURE-DEPENDENCE OF THE DIRECT ENERGY-GAP IN A GAAS/ALAS SUPERLATTICE

被引:9
作者
HUMLICEK, J [1 ]
LUKES, F [1 ]
PLOOG, K [1 ]
机构
[1] MAX PLANCK INST FESTKORPERFORSCH, W-7000 STUTTGART 80, GERMANY
关键词
D O I
10.1103/PhysRevB.42.2932
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Normal-incidence reflectance spectra have been used to study the thermal evolution of the direct energy gap in a superlattice composed of 120-times-repeated pattern of nominally 9 monolayers (ML) AlAs and 15 ML GaAs. Very low noise level in the spectra allows the structure of the heavy- and light-hole transitions to be enhanced by numerical differentiations. Excellent agreement of the observed temperature shifts in the 15-300-K range with the results of Kronig-Penney calculations is found when a temperature-dependent electron effective mass is taken into account. Two components of the lowest direct energy gap are resolved at low temperatures; we interpret this fact as due to the presence of two superlattice regions differing in the average composition by 1 ML of GaAs. © 1990 The American Physical Society.
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页码:2932 / 2936
页数:5
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