2-DIMENSIONAL NUMERICAL-ANALYSIS OF FLOATING-GATE EEPROM DEVICES

被引：13

作者：

CONCANNON, A ^{[1
]}

KEENEY, S ^{[1
]}

MATHEWSON, A ^{[1
]}

BEZ, R ^{[1
]}

LOMBARDI, C ^{[1
]}

机构：

[1] SGS THOMSON,CENT R&D,VLSI PROC DEV GRP,AGRATE BRIANZA,ITALY

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 1993年 / 40卷 / 07期

关键词：

D O I：

10.1109/16.216430

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

In this work, the importance of transient analysis in the design of floating-gate EEPROM's is demonstrated. Anomalous behavior, which was identified during transient measurements, has been simulated using HFIELDS, a general-purpose two-dimensional (2D) numerical device simulator. The corrective action that was taken at the time to eliminate the problem has been analyzed and explained using the simulation results. In addition, the simulator has been used to investigate 2D effects in the device due to process non-idealities.

引用

页码：1258 / 1262

页数：5

共 5 条

[1]

BACCARANI G, 1985, 4 P NASECODE C, P3

[2] EXPERIMENTAL TRANSIENT ANALYSIS OF THE TUNNEL CURRENT IN EEPROM CELLS [J].

BEZ, R ;

CANTARELLI, D ;

CAPPELLETTI, P .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1990, 37 (04) :1081-1086

[3]

Keeney S., 1990, International Electron Devices Meeting 1990. Technical Digest (Cat. No.90CH2865-4), P201, DOI 10.1109/IEDM.1990.237193

[4]

KEENEY S, 1991, 13TH P WORLD C COMP, P1708

[5]

Sune J., 1991, International Electron Devices Meeting 1991. Technical Digest (Cat. No.91CH3075-9), P905, DOI 10.1109/IEDM.1991.235279

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