EQUILIBRIUM CRYSTAL SHAPE OF PLANAR ISING ANTIFERROMAGNETS IN EXTERNAL FIELDS

被引:13
作者
AKUTSU, N
机构
[1] Faculty of Engineering, Osaka Electro-Communication University, Hatsu-cho, Neyagawa
关键词
EQUILIBRIUM CRYSTAL SHAPE; INTERFACE TENSION; INTERFACE STIFFNESS; INTERFACE ENTROPY; IMAGINARY PATH-WEIGHT METHOD; RANDOM WALK; ISING ANTIFERROMAGNET; 2 COMPONENTS CRYSTAL;
D O I
10.1143/JPSJ.61.477
中图分类号
O4 [物理学];
学科分类号
0702 ;
摘要
For square and honeycomb Ising antiferromagnets (AF) in external fields, one-dimensional (1 D) anisotropic interface tension and a 2 D equilibrium crystal shape (ECS) are calculated with high precision by a method using the free random walk with imaginary path-weights. The field dependence of interface entropy and interface stiffness are also shown. We apply the results to the stoichiometrically two components crystals of GaAs type. The relative vapor pressure dependence of anisotropic step tension and facet shape of the 3D ECS are obtained.
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页码:477 / 498
页数:22
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