EVIDENCE OF MINORITY-CARRIER INJECTION IN (N-N) SNO2-GE HETEROJUNCTION DIODES

[1] PHOTOCURRENT SUPPRESSION IN HETEROJUNCTION SOLAR CELLS [J]. APPLIED PHYSICS LETTERS, 1975, 27 (12) : 691 - 693

[2] EXPERIMENTS ON GE-GAAS HETEROJUNCTIONS [J]. SOLID-STATE ELECTRONICS, 1962, 5 (SEP-O) : 341 - &

[3] BRENNER A, 1954, MET FINISH, V52, P68

[4] JARZEBSKI ZM, 1976, J ELECTROCHEM SOC, V123, pC199, DOI [10.1149/1.2133010, 10.1149/1.2132647, 10.1149/1.2133090]

[5] SWITCHING TIME IN JUNCTION DIODES AND JUNCTION TRANSISTORS [J]. PROCEEDINGS OF THE INSTITUTE OF RADIO ENGINEERS, 1954, 42 (05): : 829 - 834

[6] ANALYSIS + CHARACTERIZATION OF P-N JUNCTION DIODE SWITCHING [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1964, ED11 (01) : 8 - &

[7] Milnes AG, 1972, HETEROJUNCTIONS META

[8] Wang E. Y., 1976, Twelfth IEEE Photovoltaic Specialists Conference 1976, P967

[9] GENERAL PROPERTIES OF SNO2-GAAS AND SNO2-GE HETEROJUNCTION PHOTO-VOLTAIC CELLS [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1978, 25 (07) : 800 - 803

[10] WANG EY, 1974, J ELECTROCHEM SOC, V121

[1] PHOTOCURRENT SUPPRESSION IN HETEROJUNCTION SOLAR CELLS [J]. APPLIED PHYSICS LETTERS, 1975, 27 (12) : 691 - 693

[2] EXPERIMENTS ON GE-GAAS HETEROJUNCTIONS [J]. SOLID-STATE ELECTRONICS, 1962, 5 (SEP-O) : 341 - &

[3] BRENNER A, 1954, MET FINISH, V52, P68

[4] JARZEBSKI ZM, 1976, J ELECTROCHEM SOC, V123, pC199, DOI [10.1149/1.2133010, 10.1149/1.2132647, 10.1149/1.2133090]

[5] SWITCHING TIME IN JUNCTION DIODES AND JUNCTION TRANSISTORS [J]. PROCEEDINGS OF THE INSTITUTE OF RADIO ENGINEERS, 1954, 42 (05): : 829 - 834

[6] ANALYSIS + CHARACTERIZATION OF P-N JUNCTION DIODE SWITCHING [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1964, ED11 (01) : 8 - &

[7] Milnes AG, 1972, HETEROJUNCTIONS META

[8] Wang E. Y., 1976, Twelfth IEEE Photovoltaic Specialists Conference 1976, P967

[9] GENERAL PROPERTIES OF SNO2-GAAS AND SNO2-GE HETEROJUNCTION PHOTO-VOLTAIC CELLS [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1978, 25 (07) : 800 - 803

[10] WANG EY, 1974, J ELECTROCHEM SOC, V121