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TRANSIENT-BEHAVIOR IN ZNS-TBFX THIN-FILM ELECTROLUMINESCENT DEVICES EXCITED BY VERY SHORT PULSE

被引：3
作者：
MIURA, N
MATSUMOTO, H
NAKANO, R
机构：
[1] Department of Electronics Communication, Meiji University, Kanagawa
来源：
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | 1992年 / 31卷 / 2A期
关键词：
ELECTROLUMINESCENCE; PHOTOLUMINESCENCE; THIN-FILM; UNDOPED ZNS; ZNS-TBFX; ZNS-MN; TRANSIENT BEHAVIOR; TIME-RESOLVED EMISSION SPECTRA;
D O I：
10.1143/JJAP.31.288
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
The transient characteristics in ZnS thin-films doped with Tb3+ ions under an alternating pulse voltage with very short width were measured. The emission from the Tb3+ ion saturated within the applied pulse voltage. Broad-band emission intrinsic to the ZnS host was observed in the wavelength region from 320 nm to 700 nm with very short lifetime. The 545 nm emission of the ZnS:TbFx device is separated into the emission from the ZnS host and the Tb3+ ion. The Tb3+ emission appeared in the decay of the broad-band emission. The transient behavior of the photoluminescence excited by the N2 laser showed similar characteristics. These results were also observed in the ZnS:Mn EL device.
引用
收藏
页码：288 / 294
页数：7
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