RADIATION-INDUCED INTERFACE STATES AND ESR EVIDENCE FOR ROOM-TEMPERATURE INTERACTIONS BETWEEN MOLECULAR-HYDROGEN AND SILICON DANGLING BONDS IN AMORPHOUS SIO2-FILMS ON SI

被引：7

作者：

CONLEY, JF

LENAHAN, PM

机构：

[1] Penn State University, Dept. of Engineering Science and Mechanics, University Park

来源：

MICROELECTRONIC ENGINEERING | 1993年 / 22卷 / 1-4期

关键词：

Amorphous films - Electron resonance - Hydrogen - Interfaces (materials) - Molecular physics - Radiation effects - Semiconducting films - Semiconducting silicon - Semiconductor device structures - Silica;

D O I：

10.1016/0167-9317(93)90160-7

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We establish strong experimental evidence linking reactions between molecular hydrogen and E' enter hole traps to the radiation induced interface state generation process in metal/oxide/silicon (MOS) devices,

引用

页码：215 / 218

页数：4

共 23 条

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