THEORY OF ELECTTON GALVANOMAGNETICS IN CRYSTALS - HALL EFFECT IN SEMICONDUCTORS AND SEMIMETALS

被引：83

作者：

RODE, DL ^{[1
]}

机构：

[1] BELL LABS,MURRAY HILL,NJ 07974

来源：

PHYSICA STATUS SOLIDI B-BASIC RESEARCH | 1973年 / 55卷 / 02期

关键词：

BAND STRUCTURE;

D O I：

10.1002/pssb.2220560234

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

Using the contraction mapping principle, authors shows how interated solutions of the classical Boltzmann equation with Fermi statistics are obtained. This technique potentially applies to a broad range of electronic transport problems, but in particular, Hall effects and magnetoresistance are considered in group IV, III-V, and II-VI semiconductors and semimetals.

引用

页码：687 / 696

页数：10

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