PLASMA-ENHANCED CHEMICAL-VAPOR-DEPOSITION OF TIO2 IN MICROWAVE-RADIO FREQUENCY HYBRID PLASMA REACTOR

被引:70
作者
LEE, YH
CHAN, KK
BRADY, MJ
机构
[1] IBM Research Division, Thomas J. Watson Research Center, Yorktown Heights
来源
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS | 1995年 / 13卷 / 03期
关键词
D O I
10.1116/1.579792
中图分类号
TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
A plasma tool and accompanying process have been developed for plasma enhanced chemical vapor deposition of TiO2 thin films for dynamic random access memory application. The microwave-rf (radio frequency) hybrid reactor consists of microwave power (2.45 GHz) for electron cyclotron resonance, a hollow cathode (0.1-30 MHz) for control of the plasma potential, and an additional rf (13.56 MHz) power to the substrate electrode for ion extraction and ion energy control. X-ray diffraction showed the anatase phase at a low deposition temperature below 400 °C, but the rutile phase dominanted above 400 °C. Low energy ion bombardment densifies the TiO2 films and suppresses rutile formation. A dielectric constant of 60(±5) at 1 MHz was obtained, independent of film thickness in a range from 20 to 200 nm. A SiO2 buffer layer was found to be important in order to prevent silicide formation and to keep the leakage current below 10–10 A/cm. © 1995, American Vacuum Society. All rights reserved.
引用
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页码:596 / 601
页数:6
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