INCORPORATION OF ELECTRIC-FIELD PENETRATION OF ELECTRODES IN THEORY OF ELECTRON TUNNELLING THROUGH A DIELECTRIC LAYER

被引：31

作者：

SIMMONS, JG

机构：

来源：

BRITISH JOURNAL OF APPLIED PHYSICS | 1967年 / 18卷 / 03期

关键词：

D O I：

10.1088/0508-3443/18/3/303

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：269 / &

共 24 条

[1] PHOTOEMISSIVE DETERMINATION OF BARRIER SHAPE IN TUNNEL JUNCTIONS [J].

BRAUNSTE.A ;

BRAUNSTE.M ;

PICUS, GS ;

MEAD, CA .

PHYSICAL REVIEW LETTERS, 1965, 14 (07) :219-&

[2] On the electrical resistance of contacts between solid conductors [J].

Frenkel, J .

PHYSICAL REVIEW, 1930, 36 (11) :1604-1618

[3] THE ELECTRIC TUNNEL EFFECT ACROSS THIN INSULATOR FILMS IN CONTACTS [J].

HOLM, R .

JOURNAL OF APPLIED PHYSICS, 1951, 22 (05) :569-574

[4]

Holm R., 1935, Z TECH PHYS, V16, P488

[5] CAPACITANCE OF THIN DIELECTRIC STRUCTURES [J].

KU, HY ;

ULLMAN, FG .

JOURNAL OF APPLIED PHYSICS, 1964, 35 (02) :265-&

[6]

MCCOLL M, 1965, T METALL SOC AIME, V233, P502

[7] ANOMALOUS CAPACITANCE OF THIN DIELECTRIC STRUCTURES [J].

MEAD, CA .

PHYSICAL REVIEW LETTERS, 1961, 6 (10) :545-&

[8] BARRIER LOWERING AND FIELD PENETRATION AT METAL-DIELECTRIC INTERFACES - (AL-SI02 - MOS STRUCTURES - E) [J].

MEAD, CA ;

SNOW, EH ;

DEAL, BE .

APPLIED PHYSICS LETTERS, 1966, 9 (01) :53-&

[9] CURRENT FLOW IN VERY THIN FILMS OF A2O33 AND BEO [J].

MEYERHOFFER, D ;

OCHS, SA .

JOURNAL OF APPLIED PHYSICS, 1963, 34 (09) :2535-&

[10]

NAKAI J, 1965, J APPL PHYS JAPAN, V3, P677

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